| PART |
Description |
Maker |
| IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| FDS3992_04 FDS3992 FDS3992NL FDS399204 |
Dual N-Channel PowerTrench? MOSFET 100V, 4.5A, 62m?/a>
Dual N-Channel PowerTrench㈢ MOSFET 100V, 4.5A, 62mз
Discrete Commercial N-Channel PowerTrench MOSFET, 100V, 4.5A, 0.062 Ohms @ VGS = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5EA1310 |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A)
THRU-HOLE MOUNT (LCC-28) 100V, N-CHANNEL
|
IRF[International Rectifier]
|
| FQI34P10 FQB34P10 FQB34P10TM |
From old datasheet system
100V P-Channel MOSFET
100V P-Channel QFET
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| HUFA75631SK8 HUFA75631SK8T |
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFETPower MOSFET
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | SO
|
Fairchild Semiconductor Corporation
|
| FQU8P10 FQD8P10 FQD8P10TF FQD8P10TM FQU8P10TU |
100V P-Channel QFET
100V P-Channel MOSFET 6.6 A, 100 V, 0.53 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| STS3C2F100 |
N-CHANNEL 100V - 0.110 OHM - 3A SO-8 P-CHANNEL 100V - 0.320 OHM - 1.5A SO-8 COMPLEMENTARY PAIR STripFET™ POWER MOSFET
|
ST Microelectronics
|
| FQB19N10L FQI19N10L FQB19N10LTM |
100V Logic N-Channel MOSFET(漏源电压00V的逻辑N沟道增强型MOS场效应管) 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
100V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 20A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 3A条（丁）| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
| IRHNA593160 IRHNA597160 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 52A I(D) | SMT 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 52A条（丁）|贴片
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
|
Renesas Electronics, Corp.
International Rectifier
|
| IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
| FQB19N10 FQI19N10 FQB19N10TM |
100V N-Channel QFET
100V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
